? semiconductor components industries, llc, 2004 june, 2004 ? rev. 3 1 publication order number: bc846awt1/d bc846awt1, bc847awt1, bc848awt1 series general purpose transistors npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sc?70/sot?323 which is designed for low power surface mount applications. features ? pb?free packages are available maximum ratings rating symbol value unit collector-emitter voltage bc846 bc847 bc848 v ceo 65 45 30 v collector-base voltage bc846 bc847 bc848 v cbo 80 50 30 v emitter-base voltage bc846 bc847 bc848 v ebo 6.0 6.0 5.0 v collector current ? continuous i c 100 madc maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c p d 150 c/w thermal resistance, junction?to?ambient r ja 833 c/w total device dissipation p d 2.4 mw/ c junction and storage temperature t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com sc?70/sot?323 case 419 style 3 marking diagram xx = specific device code d = date code xxd collector 3 1 base 2 emitter 1 2 3 see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information
bc846awt1, bc847awt1, bc848awt1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage bc846 series (i c = 10 ma) bc847 series bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ?emitter breakdown voltage bc846 series (i c = 10 a, v eb = 0) bc847 series bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ?base breakdown voltage bc846 series (i c = 10 a) bc847 series bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ?base breakdown voltage bc846 series (i e = 1.0 a) bc847 series bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain bc846a, bc847a, bc848a (i c = 10 a, v ce = 5.0 v) bc846b, bc847b, bc848b bc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846a, bc847a, bc848a bc846b, bc847b, bc848b bc847c, bc848c h fe ? ? ? 110 200 420 90 150 270 180 290 520 ? ? ? 220 450 800 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ?emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ?emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ?emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small?signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846awt1, bc847awt1, bc848awt1 series http://onsemi.com 3 bc847 series & bc848 series figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846awt1, bc847awt1, bc848awt1 series http://onsemi.com 4 bc846 series figure 7. dc current gain i c , collector current (ma) figure 8. aono voltage i c , collector current (ma) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficient i c , collector current (ma) -1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma -1.4 -1.8 -2.2 -2.6 -3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. current?gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846awt1, bc847awt1, bc848awt1 series http://onsemi.com 5 device ordering and specific marking information device specific marking code package shipping 2 bc846awt1 1a sc?70 (sot?323) bc846awt1g 1a sc?70 (sot?323) (pb?free) 3,000 / tape & reel BC846BWT1 1b sc?70 (sot?323) 3,000 / tape & reel bc847awt1 1e sc?70 (sot?323) 3,000 / tape & reel bc847bwt1 1f sc?70 (sot?323) bc847bwt1g 1f sc?70 (sot?323) (pb?free) 3,000 / tape & reel bc847cwt1 1g sc?70 (sot?323) bc847cwt1g 1g sc?70 (sot?323) (pb?free) 3,000 / tape & reel bc848awt1 1j sc?70 (sot?323) 3,000 / tape & reel bc848bwt1 1k sc?70 (sot?323) bc848bwt1g 1k sc?70 (sot?323) (pb?free) 3,000 / tape & reel bc848cwt1 1l sc?70 (sot?323) 3,000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifi- cations brochure, brd8011/d.
bc846awt1, bc847awt1, bc848awt1 series http://onsemi.com 6 package dimensions sc?70 (sot?323) case 419?04 issue l *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 3: pin 1. base 2. emitter 3. collector c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bc846awt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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